Hydrogen Spillover Phenomenon at the Interface of Metal-Supported Electrocatalysts for Hydrogen Evolution.

ConspectusHydrogen spillover, as a well-known phenomenon for thermal hydrogenation, generally involves the migration of active hydrogen on the surface of metal-supported catalysts. For thermocatalytic hydrogenation, hydrogen spillover generally takes place from metals with superiority for dissociating hydrogen molecules to supports with strong hydrogen adsorption under a H2 environment with high pressures. The former can bring high hydrogen chemical potential to largely reduce the kinetic barrier of the migration of active hydrogen species from metals to supports. At the same time, the latter can make H* migration thermodynamically spontaneous. For these reasons, hydrogen spillover is a common interfacial phenomenon occurring on metal-supported catalysts during thermocatalysis. Recently, this phenomenon has been observed for the exceptionally enhanced electrocatalytic performance for hydrogen evolution and other electrocatalytic organic synthesis. Different from hydrogen spillover for thermocatalysis under high H2 pressure, hydrogen spillover for electrocatalysis involves the migration of active hydrogen species (H*) from metals with strong hydrogen adsorption to supports with weak hydrogen adsorption, thereby suffering from a thermodynamically unfavorable process accompanied by a high kinetic barrier. Thus, the occurrence of hydrogen spillover at the electrocatalytic interface is not easy, and successful cases are rare. Understanding the underlying nature of hydrogen spillover at the electrocatalytic interface of metal-supported catalysts is critical to the rational design of advanced electrocatalysts.In this Account, we provide in-depth insights into recent advances in hydrogen spillover at the electrocatalytic interface for a significantly enhanced hydrogen evolution performance. Electron accumulation at the metal-support interface induces severe interfacial H* trapping and is recognized as the main factor in the failed hydrogen spillover. Given this, we developed two novel strategies to promote the occurrence of hydrogen spillover at the electrocatalytic interface. These strategies include (i) the introduction of ligand environments to enrich the local hydrogen coverage on metals and lower the barrier for interfacial hydrogen spillover and (ii) the minimization of work function difference between metals and supports (ΔΦ) to relieve electron accumulation and lower the kinetic barrier for hydrogen spillover. Also, we summarize the previously reported strategy of shortening the metal-support interface distance to lower the kinetic barrier for interfacial hydrogen spillover. Afterward, some criteria and methodologies are proposed to identify the hydrogen spillover phenomenon at the electrocatalytic interface. Finally, the remaining challenges and future perspectives are also discussed. Based on this Account, we aim to provide new insights into electrocatalysis, particularly the targeted control of hydrogen spillover at the electrocatalytic interface, and then to offer guidelines for the rational design of advanced electrocatalysts.

Diffusion-Dominated Luminescence Dynamics of CsPbBr3 Studied Using Cathodoluminescence and Microphotoluminescence Spectroscopy.

Time-resolved or time-correlation measurements using cathodoluminescence (CL) reveal the electronic and optical properties of semiconductors, such as their carrier lifetimes, at the nanoscale. However, halide perovskites, which are promising optoelectronic materials, exhibit significantly different decay dynamics in their CL and photoluminescence (PL). We conducted time-correlation CL measurements of CsPbBr3 using Hanbury Brown-Twiss interferometry and compared them with time-resolved PL. The measured CL decay time was on the order of subnanoseconds and was faster than PL decay at an excited carrier density of 2.1 × 1018 cm-3. Our experiment and analytical model revealed the CL dynamics induced by individual electron incidences, which are characterized by highly localized carrier generation followed by a rapid decrease in carrier density due to diffusion. This carrier diffusion can play a dominant role in the CL decay time for undoped semiconductors, in general, when the diffusion dynamics are faster than the carrier recombination.

Pulse irradiation synthesis of metal chalcogenides on flexible substrates for enhanced photothermoelectric performance.

High synthesis temperatures and specific growth substrates are typically required to obtain crystalline or oriented inorganic functional thin films, posing a significant challenge for their utilization in large-scale, low-cost (opto-)electronic applications on conventional flexible substrates. Here, we explore a pulse irradiation synthesis (PIS) to prepare thermoelectric metal chalcogenide (e.g., Bi2Se3, SnSe2, and Bi2Te3) films on multiple polymeric substrates. The self-propagating combustion process enables PIS to achieve a synthesis temperature as low as 150 °C, with an ultrafast reaction completed within one second. Beyond the photothermoelectric (PTE) property, the thermal coupling between polymeric substrates and bismuth selenide films is also examined to enhance the PTE performance, resulting in a responsivity of 71.9 V/W and a response time of less than 50 ms at 1550 nm, surpassing most of its counterparts. This PIS platform offers a promising route for realizing flexible PTE or thermoelectric devices in an energy-, time-, and cost-efficient manner.

A 2D Heterostructure-Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing.

The demand for economical and efficient data processing has led to a surge of interest in neuromorphic computing based on emerging two-dimensional (2D) materials in recent years. As a rising van der Waals (vdW) p-type Weyl semiconductor with many intriguing properties, tellurium (Te) has been widely used in advanced electronics/optoelectronics. However, its application in floating gate (FG) memory devices for information processing has never been explored. Herein, an electronic/optoelectronic FG memory device enabled by Te-based 2D vdW heterostructure for multimodal reservoir computing (RC) is reported. When subjected to intense electrical/optical stimuli, the device exhibits impressive nonvolatile electronic memory behaviors including ≈108 extinction ratio, ≈100 ns switching speed, >4000 cycles, >4000-s retention stability, and nonvolatile multibit optoelectronic programmable characteristics. When the input stimuli weaken, the nonvolatile memory degrades into volatile memory. Leveraging these rich nonlinear dynamics, a multimodal RC system with high recognition accuracy of 90.77% for event-type multimodal handwritten digit-recognition is demonstrated.

Multiscale Confinement Engineering for Boosting Overall Water Splitting by One-Step Stringing of a Single Atom and a Janus Nanoparticle within a Carbon Nanotube.

Enzyme-mimicking confined catalysis has attracted great interest in heterogeneous catalytic systems that can regulate the geometric or electronic structure of the active site and improve its performance. Herein, a liquid-assisted chemical vapor deposition (LCVD) strategy is proposed to simultaneously confine the single-atom Ru sites onto sidewalls and Janus Ni/NiO nanoparticles (NPs) at the apical nanocavities to thoroughly energize the N-doped carbon nanotube arrays (denoted as Ni/NiO@Ru-NC). The bifunctional Ni/NiO@Ru-NC electrocatalyst exhibits overpotentials of 88 and 261 mV for hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) at 100 mA cm-2 in alkaline solution, respectively, all ranking the top tier among the carbon-supported metal-based electrocatalysts. Moreover, once integrated into an anion-exchange membrane water electrolysis (AEMWE) system, Ni/NiO@Ru-NC can act as an efficient and robust bifunctional electrocatalyst to operate stably for 50 h under 500 mA cm-2. Theoretical calculations and experimental exploration demonstrate that the confinement of Ru single atoms and Janus Ni/NiO NPs can regulate the electron distribution with strong orbital couplings to activate the NC nanotube from sidewall to top, thus boosting overall water splitting.

Lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires.

Growing high-quality core-shell heterostructure nanowires is still challenging due to the lattice mismatch issue at the radial interface. Herein, a versatile strategy is exploited for the lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires by simply utilizing the surfactant and amorphous natures of chalcogenide semiconductors. Specifically, a variety of III-V/chalcogenide core-shell heterostructure nanowires are successfully constructed with controlled shell thicknesses, compositions, and smooth surfaces. Due to the conformal properties of obtained heterostructure nanowires, the wavelength-dependent bi-directional photoresponse and visible light-assisted infrared photodetection are realized in the type-I GaSb/GeS core-shell heterostructure nanowires. Also, the enhanced infrared photodetection is found in the type-II InGaAs/GeS core-shell heterostructure nanowires compared with the pristine InGaAs nanowires, in which both responsivity and detectivity are improved by more than 2 orders of magnitude. Evidently, this work paves the way for the lattice-mismatch-free construction of core-shell heterostructure nanowires by chemical vapor deposition for next-generation high-performance nanowire optoelectronics.

Unlocking the Ambient Temperature Effect on FA-Based Perovskites Crystallization by In Situ Optical Method.

Multiple cation-composited perovskites are demonstrated as a promising approach to improving the performance and stability of perovskite solar cells (PSCs). However, recipes developed for fabricating high-performance perovskites in laboratories are always not transferable in large-scale production, as perovskite crystallization is highly sensitive to processing conditions. Here, using an in situ optical method, the ambient temperature effect on the crystallization process in multiple cation-composited perovskites is investigated. It is found that the typical solvent-coordinated intermediate phase in methylammonium lead iodide (MAPbI3 ) is absent in formamidinium lead iodide (FAPbI3 ), and nucleation is almost completed in FAPbI3 right after spin-coating. Interestingly, it is found that there is noticeable nuclei aggregation in Formamidinium (FA)-based perovskites even during the spin-coating process, which is usually only observed during the annealing in MAPbI3 . Such aggregation is further promoted at a higher ambient temperature or in higher FA content. Instead of the general belief of stress release-induced crack formation, it is proposed that the origin of the cracks in FA-based perovskites is due to the aggregation-induced solute depletion effect. This work reveals the limiting factors for achieving high-quality FA-based perovskite films and helps to unlock the existing narrow processing window for future large-scale production.

Controlling Surface Chemical Inhomogeneity of Ni2 P/MoNiP2 /MoP Heterostructure Electrocatalysts for Efficient Hydrogen Evolution Reaction.

Crystalline/amorphous phase engineering is demonstrated as a powerful strategy for electrochemical performance optimization. However, it is still a considerable challenge to prepare transition metal-based crystalline/amorphous heterostructures because of the low redox potential of transition metal ions. Herein, a facile H2 -assisted method is developed to prepare ternary Ni2 P/MoNiP2 /MoP crystalline/amorphous heterostructure nanowires on the conductive substrate. The characterization results show that the content of the MoNiP2 phase and the crystallinity of the MoP phase can be tuned by simply controlling the H2 concentration. The obtained electrocatalyst exhibits a superior alkaline hydrogen evolution reaction performance, delivering overpotentials of 20 and 76 mV to reach current densities of 10 and 100 mA cm-2 with a Tafel slope of 30.6 mV dec-1 , respectively. The catalysts also reveal excellent stability under a constant 100 h operation, higher than most previously reported electrocatalysts. These striking performances are ascribed to the optimized hydrogen binding energy and favorable hydrogen adsorption/desorption kinetics. This work not only exhibits the potential application of ternary Ni2 P/MoNiP2 /MoP crystalline/amorphous heterostructure nanowires catalysts for practical electrochemical water splitting, but also paves the way to prepare non-noble transition metal-based electrocatalysts with optimized crystalline/amorphous heterostructures.

Multislip-enabled morphing of all-inorganic perovskites.

All-inorganic lead halide perovskites (CsPbX3, X = Cl, Br or I) are becoming increasingly important for energy conversion and optoelectronics because of their outstanding performance and enhanced environmental stability. Morphing perovskites into specific shapes and geometries without damaging their intrinsic functional properties is attractive for designing devices and manufacturing. However, inorganic semiconductors are often intrinsically brittle at room temperature, except for some recently reported layered or van der Waals semiconductors. Here, by in situ compression, we demonstrate that single-crystal CsPbX3 micropillars can be substantially morphed into distinct shapes (cubic, L and Z shapes, rectangular arches and so on) without localized cleavage or cracks. Such exceptional plasticity is enabled by successive slips of partial dislocations on multiple [Formula: see text] systems, as evidenced by atomic-resolution transmission electron microscopy and first-principles and atomistic simulations. The optoelectronic performance and bandgap of the devices were unchanged. Thus, our results suggest that CsPbX3 perovskites, as potential deformable inorganic semiconductors, may have profound implications for the manufacture of advanced optoelectronics and energy systems.

Uncovering the Role of Crystal Phase in Determining Nonvolatile Flash Memory Device Performance Fabricated from MoTe2-Based 2D van der Waals Heterostructures.

Although the crystal phase of two-dimensional (2D) transition metal dichalcogenides (TMDs) has been proven to play an essential role in fabricating high-performance electronic devices in the past decade, its effect on the performance of 2D material-based flash memory devices still remains unclear. Here, we report the exploration of the effect of MoTe2 in different phases as the charge-trapping layer on the performance of 2D van der Waals (vdW) heterostructure-based flash memory devices, where a metallic 1T'-MoTe2 or semiconducting 2H-MoTe2 nanoflake is used as the floating gate. By conducting comprehensive measurements on the two kinds of vdW heterostructure-based devices, the memory device based on MoS2/h-BN/1T'-MoTe2 presents much better performance, including a larger memory window, faster switching speed (100 ns), and higher extinction ratio (107), than that of the device based on the MoS2/h-BN/2H-MoTe2 heterostructure. Moreover, the device based on the MoS2/h-BN/1T'-MoTe2 heterostructure also shows a long cycle (>1200 cycles) and retention (>3000 s) stability. Our study clearly demonstrates that the crystal phase of 2D TMDs has a significant impact on the performance of nonvolatile flash memory devices based on 2D vdW heterostructures, which paves the way for the fabrication of future high-performance memory devices based on 2D materials.

Optically Readable Organic Electrochemical Synaptic Transistors for Neuromorphic Photonic Image Processing.

Optically readable organic synaptic devices have great potential in both artificial intelligence and photonic neuromorphic computing. Herein, a novel optically readable organic electrochemical synaptic transistor (OR-OEST) strategy is first proposed. The electrochemical doping mechanism of the device was systematically investigated, and the basic biological synaptic behaviors that can be read by optical means are successfully achieved. Furthermore, the flexible OR-OESTs are capable of electrically switching the transparency of semiconductor channel materials in a nonvolatile manner, and thus the multilevel memory can be achieved through optical readout. Finally, the OR-OESTs are developed for the preprocessing of photonic images, such as contrast enhancement and denoising, and feeding the processed images into an artificial neural network, achieving a recognition rate of over 90%. Overall, this work provides a new strategy for the implementation of photonic neuromorphic systems.

Green Fabrication of Freestanding Piezoceramic Films for Energy Harvesting and Virus Detection.

Most electronics such as sensors, actuators and energy harvesters need piezoceramic films to interconvert mechanical and electrical energy. Transferring the ceramic films from their growth substrates for assembling electronic devices commonly requires chemical or physical etching, which comes at the sacrifice of the substrate materials, film cracks, and environmental contamination. Here, we introduce a van der Waals stripping method to fabricate large-area and freestanding piezoceramic thin films in a simple, green, and cost-effective manner. The introduction of the quasi van der Waals epitaxial platinum layer enables the capillary force of water to drive the separation process of the film and substrate interface. The fabricated lead-free film, [Formula: see text] (BCZT), shows a high piezoelectric coefficient d33 = 209 ± 10 pm V-1 and outstanding flexibility of maximum strain 2%. The freestanding feature enables a wide application scenario, including micro energy harvesting, and covid-19 spike protein detection. We further conduct a life cycle analysis and quantify the low energy consumption and low pollution of the water-based stripping film method.

Van der Waals nanomesh electronics on arbitrary surfaces.

Chemical bonds, including covalent and ionic bonds, endow semiconductors with stable electronic configurations but also impose constraints on their synthesis and lattice-mismatched heteroepitaxy. Here, the unique multi-scale van der Waals (vdWs) interactions are explored in one-dimensional tellurium (Te) systems to overcome these restrictions, enabled by the vdWs bonds between Te atomic chains and the spontaneous misfit relaxation at quasi-vdWs interfaces. Wafer-scale Te vdWs nanomeshes composed of self-welding Te nanowires are laterally vapor grown on arbitrary surfaces at a low temperature of 100 °C, bringing greater integration freedoms for enhanced device functionality and broad applicability. The prepared Te vdWs nanomeshes can be patterned at the microscale and exhibit high field-effect hole mobility of 145 cm2/Vs, ultrafast photoresponse below 3 µs in paper-based infrared photodetectors, as well as controllable electronic structure in mixed-dimensional heterojunctions. All these device metrics of Te vdWs nanomesh electronics are promising to meet emerging technological demands.

Contact Engineering of Halide Perovskites: Gold is Not Good Enough; Metalloid is Better.

The operation stability of halide perovskite devices is the critical issue that impedes their commercialization. The main reasons are that the ambient H2 O molecules can easily deteriorate the perovskites, while the metal electrodes react in different degrees with the perovskites. Herein, one kind of new electrode, the metalloids, is reported, which are much more stable than the conventional noble metals as electrical contacts for halide perovskites. The degradation mechanism of halide perovskites with noble metal electrodes is carefully studied and compared with the metalloid electrodes. It is found that the iodide ions can easily halogenate Cu and Ag in halide perovskites. Although Au is almost not halogenated, it can also decompose the perovskite film. On the contrary, after long-term storage, the metalloid electrodes remain intact on the perovskite film without any degradation. In addition, the long-time operation stability of the perovskite devices with metalloid electrodes is much higher than that of noble metals. First-principles calculations confirm the exceptional stability of the metalloid electrodes.This work explores the ultra-stable electrodes for halide perovskites, paving the way to the large-scale deployment of perovskite-based electronic devices.

Electronic/Optoelectronic Memory Device Enabled by Tellurium-based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band.

Although 2D materials are widely explored for data storage and neuromorphic computing, the construction of 2D material-based memory devices with optoelectronic responsivity in the short-wave infrared (SWIR) region for in-sensor reservoir computing (RC) at the optical communication band still remains a big challenge. In this work, an electronic/optoelectronic memory device enabled by tellurium-based 2D van der Waals (vdW) heterostructure is reported, where the ferroelectric CuInP2 S6 and tellurium channel endow this device with both the long-term potentiation/depression by voltage pulses and short-term potentiation by 1550 nm laser pulses (a typical wavelength in the conventional fiber optical communication band). Leveraging the rich dynamics, a fully memristive in-sensor RC system that can simultaneously sense, decode, and learn messages transmitted by optical fibers is demonstrated. The reported 2D vdW heterostructure-based memory featuring both the long-term and short-term memory behaviors using electrical and optical pulses in SWIR region has not only complemented the wide spectrum of applications of 2D materials family in electronics/optoelectronics but also paves the way for future smart signal processing systems at the edge.

Electrically Switchable Polarization in Bi2 O2 Se Ferroelectric Semiconductors.

Atomically 2D layered ferroelectric semiconductors, in which the polarization switching process occurs within the channel material itself, offer a new material platform that can drive electronic components toward structural simplification and high-density integration. Here, a room-temperature 2D layered ferroelectric semiconductor, bismuth oxychalcogenides (Bi2 O2 Se), is investigated with a thickness down to 7.3 nm (≈12 layers) and piezoelectric coefficient (d33 ) of 4.4 ± 0.1 pm V-1 . The random orientations and electrically dependent polarization of the dipoles in Bi2 O2 Se are separately uncovered owing to the structural symmetry-breaking at room temperature. Specifically, the interplay between ferroelectricity and semiconducting characteristics of Bi2 O2 Se is explored on device-level operation, revealing the hysteresis behavior and memory window (MW) formation. Leveraging the ferroelectric polarization originating from Bi2 O2 Se, the fabricated device exhibits "smart" photoresponse tunability and excellent electronic characteristics, e.g., a high on/off current ratio > 104 and a large MW to the sweeping range of 47% at VGS  = ±5 V. These results demonstrate the synergistic combination of ferroelectricity with semiconducting characteristics in Bi2 O2 Se, laying the foundation for integrating sensing, logic, and memory functions into a single material system that can overcome the bottlenecks in von Neumann architecture.

Au-Seeded CsPbI3 Nanowire Optoelectronics via Exothermic Nucleation.

Converting vapor precursors to solid nanostructures via a liquid noble-metal seed is a common vapor deposition principle. However, such a noble-metal-seeded process is excluded from the crystalline halide perovskite synthesis, mainly hindered by the growth mechanism shortness. Herein, powered by a spontaneous exothermic nucleation process (ΔH < 0), the Au-seeded CsPbI3 nanowires (NWs) growth is realized based on a vapor-liquid-solid (VLS) growth mode. It is energetically favored that the Au seeds are reacted with a Pb vapor precursor to form molten Au-Pb droplets at temperatures down to 212 °C, further triggering the low-temperature VLS growth of CsPbI3 NWs. More importantly, this Au-seeded process reduces in-bandgap trap states and consequently avoids Shockley-Read-Hall recombination, contributing to outstanding photodetector performances. Our work extends the powerful Au-seeded VLS growth mode to the emerging halide perovskites, which will facilitate their nanostructures with tailored material properties.

One-Dimensional Atomic Chains for Ultimate-Scaled Electronics.

The continuous downscaling of semiconducting channels in transistors has driven the development of modern electronics. However, with the component transistors becoming smaller and denser on a single chip, the continued downscaling progress has touched the physical limits. In this Perspective, we suggest that the emerging one-dimensional (1D) material system involving inorganic atomic chains (ACs) that are packed by van der Waals (vdW) interactions may tackle this issue. Stemming from their 1D crystal structures and naturally terminated surfaces, 1D ACs could potentially shrink transistors to atomic-scale diameters. Also, we argue that 1D ACs with few-atom widths allow us to revisit 1D materials and uncover physical properties distinct from conventional materials. These ultrathin 1D AC materials demand substantive attention. They may bring opportunities to develop ultimate-scaled AC-based electronic, optoelectronic, thermoelectric, spintronic, memory devices, etc.

Room-Temperature Broad-Wavelength-Tunable Single-Mode Lasing from Alloyed CdS1-xSex Nanotripods.

Wavelength-tunable semiconductor nanolasers have attracted tremendous attention for their tunable emissions and robust stability, bringing possibilities for various applications, including nanophotonic circuits, solid-state white-light sources, wavelength-converted devices, and on-chip optical communications. Here, we report on the demonstration of broadband-tunable, single-mode nanolasers based on high-quality alloyed single crystalline CdS1-xSex (x = 0-1) nanotripods with well-formed facets fabricated using a conventional CVD approach. Microstructural characterization and optical investigations reveal that these structures are crystalline with composition-tunable CdS1-xSex alloys. Microphotoluminescence spectra and mapping of these nanotripods exhibit emissions with continuous wavelengths from 509 to 712 nm, further demonstrating that the CdS1-xSex alloys have tunable bandgaps due to the composition gradient. Additionally, under a pulse laser illumination, room-temperature single-mode lasing is clearly observed from these nanotripods cavities, which shows almost identical emission lines with a high-quality factor of ∼1231. More importantly, wavelength continuously tunable nanolasers from 520 to 738 nm are successfully constructed using these bandgap gradient nanotripods. The capability to fabricate high-quality tunable nanolasers represents a significant step toward high-integration optical circuits and photonics communications.

Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS2 Heterojunctions.

The incapability of modulating the photoresponse of assembled heterostructure devices has remained a challenge for the development of optoelectronics with multifunctionality. Here, a gate-tunable and anti-ambipolar phototransistor is reported based on 1D GaAsSb nanowire/2D MoS2 nanoflake mixed-dimensional van der Waals heterojunctions. The resulting heterojunction shows apparently asymmetric control over the anti-ambipolar transfer characteristics, possessing potential to implement electronic functions in logic circuits. Meanwhile, such an anti-ambipolar device allows the synchronous adjustment of band slope and depletion regions by gating in both components, thereby giving rise to the gate-tunability of the photoresponse. Coupled with the synergistic effect of the materials in different dimensionality, the hybrid heterojunction can be readily modulated by the external gate to achieve a high-performance photodetector exhibiting a large on/off current ratio of 4 × 104, fast response of 50 µs, and high detectivity of 1.64 × 1011 Jones. Due to the formation of type-II band alignment and strong interfacial coupling, a prominent photovoltaic response is explored in the heterojunction as well. Finally, a visible image sensor based on this hybrid device is demonstrated with good imaging capability, suggesting the promising application prospect in future optoelectronic systems.